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     MR850, MR851, MR852, MR854, MR856 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol MR850 MR851 MR852 MR854 MR856 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 50 100 200 400 600 V Non?Repetitive Peak Reverse Voltage VRSM 75 150 250 450 650 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 V Average Rectified Forward Current (Single phase resistive load, TA = 80 °C) IO 3.0 A Non?Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions) IFSM 100 (one cycle) A Operating and Storage Junction Temperature Range TJ, Tstg ? 65 to +125 ? 65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction?to?Ambient (Note 1) RJA 28 °C/W Thermal Resistance, Junction?to?Lead (Note 1) RJL 5.5 °C/W 1. Mounted with minimum recommended pad size, PC board FR?4. ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Forward Voltage (IF = 3.0 A, T J = 25 °C) VF ? 1.04 1.25 V Reverse Current (rated DC voltage) TJ = 25 °C MR850 MR851 MR852 MR854 MR856 TJ = 80 °C IR ? ? ? ? ? ? 2.0 ? 60 ? ? 100 10 150 150 200 250 300 A REVERSE RECOVERY CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Reverse Recovery Time (IF = 1.0 A to V R = 30 Vdc) (IF = 15 A, di/dt = 10 A/ s) trr ? ? 100 150 200 300 ns Reverse Recovery Current (IF = 1.0 A to V R = 30 Vdc) IRM(REC) ? ? 2.0 A |